Sputter deposition
Автор:
Jesse Russell,Ronald Cohn, 100 стр., издатель:
"Книга по Требованию", ISBN:
978-5-5148-5077-8
High Quality Content by WIKIPEDIA articles! Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction — order 1% — of the ejected particles are ionized) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to...