The hydrogen impurity in silicon is a very important defect, and has been studied both theoretically and experimentally for a considerable time. It has a wide range of physical effects, and is often deliberately introduced to saturate dangling bonds and hence improve the quality of interfaces such as with Si/Si02. It also has a number of less desirable effects, such as passivating both acceptor and donor defects (i.e. it is amphoteric) and can also enhance the diffusion of oxygen - another common defect. Since it has such significant effects, it is important to have a thorough microscopic understanding of the structure and properties of this defect. Формат: 16,5 см x 24 см.

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