Multigate device
Автор:
Jesse Russell,Ronald Cohn, 103 стр., издатель:
"Книга по Требованию", ISBN:
978-5-5137-9157-7
High Quality Content by WIKIPEDIA articles! A multigate device or multiple gate field-effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a Multiple Independent Gate Field Effect Transistor or MIGFET. Multigate transistors are one of several strategies being developed by CMOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's Law. Development efforts into multigate transistors have been reported by AMD, Hitachi, IBM, Infineon Technologies, Intel Corporation, TSMC, Freescale Semiconductor, University of California, Berkeley and others and the ITRS predicts that such devices will be the cornerstone of sub-32 nm...