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Advanced Simulation Methods For Gallium Nitride Electronic Devices. An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors
издатель: "Книга по требованию", ISBN: 978-3-6393-1929-3In this work, an accurate analysis of state-of-the- art high-frequency and high-power High Electron Mobility Transistor (HEMT) devices has been performed by using both commercial simulation tools and a full band Cellular Monte Carlo (CMC) simulator,...
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