Three types of nanostructured materials have been investigated: C60 on InP (100), Indium clusters on InP (100) and luminescent alkylated-Si quantum dots. The growth model and electronic structure of C60 molecules adsorbed on InP (100) were studied by XPS and UPS as a function of coverage and annealing temperature. The evolution of clean, In-terminated InP (100)-(2 ? 4) surfaces is investigated by SRPES as a function of annealing temperature. During the course of illumination with 145 eV photons we have monitored the evolution of the Si 2p core level, and observed in real time a splitting and growth of a new Si 2p component assigned to the Si4+ ionic state of Si. This new peak is attributed to in situ oxidation of Si quantum dots caused by photo-induced reaction with water, multilayers of which are present on the surface of the as- introduced quantum dots. XEOL reveals that two bands are active upon soft X-ray photon excitation. Surprisingly the 390 nm band (blue...

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