The ongoing miniaturisation in the semiconductor industry places many major challenges for materials as well as the process design. A very important step is the residue-free and gentle stripping of photo-resists. The standard process is a sequence of plasma etching and wet chemical cleaning. Hence, with actual structures of 32 nm and new materials for high- and low-k dielectrics, the aggressive plasma etching has come to its limits. For the future it is thus essential to find a non-destructive wet cleaning method. Such alternatives already exist originated from the standard SPM, modified to SOM and finally to ozonated water. This chemistry not only is cost efficient and eco-friendly, it has also proven its feasibility with i-line resists. The challenge now is to adapt this chemistry to currently applied DUV-resists which essentially differ in their structures. All-important is to find a way to remove the crust generated on the resists during implantation steps, being impossible by wet...

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